Abstract

The influence of the topology of electrodes on the electrical and photoelectric characteristics of metal–semiconductor–metal structures is studied. Gallium-oxide films are produced by the radio-frequency magnetron-assisted sputtering of a Ga₂O₃ target onto (0001)-oriented sapphire substrates. Two types of electrodes are formed on the surface of the oxide films. The first type corresponded to two parallel electrodes spaced by an interelectrode distance of 250 μm, and the second type to interdigitated electrodes. In the case of the second type of electrodes, the distance between the “fingers” is 50, 30, 10, and 5 μm. The structures possess sensitivity to ultraviolet radiation at a wavelength of λ = 254 nm, irrespective of the type of contact. The second type of detectors with an interelectrode distance of 5 μm show the largest photocurrents, I_ph = 3.8 mA, and a specific detectivity of D* = 5.54 × 10¹⁵ cm Hz^0.5 W^–1.

中文翻译：

---

电极对紫外辐射日盲检测器参数的影响

摘要

研究了电极拓扑结构对金属-半导体-金属结构的电和光电特性的影响。通过射频磁控辅助Ga ₂ O ₃溅射制备氧化镓膜对准（0001）取向的蓝宝石衬底。在氧化膜的表面上形成两种类型的电极。第一种对应于两个平行电极，电极间距为250μm，第二种对应于叉指电极。在第二类型的电极的情况下，“手指”之间的距离是50、30、10和5μm。无论接触的类型如何，该结构均对波长为λ= 254 nm的紫外线具有敏感性。电极间距离为5μm的第二种类型的检测器显示出最大的光电流，I _ph = 3.8 mA，比检测度D * = 5.54×10 ¹⁵ cm Hz ^0.5 W ^–1。