Abstract

Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with increasing optical confinement factor as the cavity length decreases. In a laser with 10 quantum well-dot layers, the lasing-wavelength position remains within the limits of the fundamental optical transition down to the smallest cavity lengths (100 μm). In devices with a single quantum well-dot layer and/or with a low optical confinement factor, lasing directly switches from the ground state to waveguide states omitting excited states below ≤200 μm. Such an effect has not been observed in quantum-well- and quantum-dot lasers and can be attributed to the abnormally low density of excited states in quantum well-dots.

中文翻译：

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有源区和波导设计对基于InGaAs / GaAs量子阱点的边缘发射激光器性能的影响

摘要

研究了基于新型过渡尺寸InGaAs / GaAs量子异质结构的具有有源区的边缘发射激光器，即量子阱点，其在量子阱和量子点之间的性质处于中间。结果表明，随着腔长的减小，激光波长蓝移的速率随着有源区中量子阱点层数量的增加以及光学限制因子的增加而减小。在具有10个量子阱点层的激光器中，激光波长位置保持在基本光学跃迁的范围内，直到最小的腔体长度（100μm）。在具有单个量子阱点层和/或具有低光学限制因子的设备中，激光直接从基态切换到波导状态，从而省略了≤200μm以下的激发态。