We performed systematic transport measurements on FeSe single crystals with applying in-plane biaxial strain $\varepsilon$ ranging from $-0.96\%$ to 0.23%. Biaxial strain was introduced by firmly gluing samples to various substrate materials with different thermal expansion. With increasing $\varepsilon$, structural and superconducting transition temperatures monotonically increased and decreased, respectively. We analyzed magnetotransport results using a compensated three-carrier model. The evaluated densities of hole and electron carriers systematically changed with strain. This indicates that we succeeded in controlling the band structure of single-crystalline FeSe.

中文翻译：

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通过双轴应变控制FeSe单晶的能带结构

我们通过施加面内双轴应变对FeSe单晶进行了系统的输运测量 $\varepsilon$ 从 $-0.96％$至0.23％。通过将样品牢固地粘合到具有不同热膨胀的各种基材上，从而引入双轴应变。随着增加$\varepsilon$，结构和超导转变温度分别单调增加和减少。我们使用补偿的三载流子模型分析了磁传输的结果。空穴和电子载流子的评估密度随应变而系统地改变。这表明我们成功地控制了单晶FeSe的能带结构。