SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss, and a higher reliability. SiC MRC power devices such as SiC MRC‐MOSFET and SiC MRC‐IGBT can achieve this performance, but have the problems of on‐voltage degradation and a large snap‐back voltage. The former has been solved by the newly developed majority carrier heating‐TEDREC (MaCH‐TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.

中文翻译：

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SiC合并反向导电器件的开发

已经开发了由单极器件和双极器件组成的SiC合并反向导电（MRC）功率器件，以实现更小的芯片尺寸，更低的功率损耗和更高的可靠性。SiC MRC功率器件（例如SiC MRC-MOSFET和SiC MRC-IGBT）可以实现此性能，但是存在导通电压下降和较大的骤回电压的问题。前者已通过新开发的多数载流子加热TEDREC（MaCH-TEDREC）方法解决，而后者已通过新开发的双缓冲器件结构和带有先导IGBT的新型标准单元得以解决。