Abstract

The possibility of modifying the properties of a (Ga,Mn)As layer on the surface of a quantum-size InGaAs/GaAs-structure by laser annealing with the conservation of its emitting properties is studied. To perform these studies by a combination of the methods of MOC-hydride epitaxy and pulsed laser deposition, the structures have been prepared with four quantum wells InGaAs/GaAs (indium contents from 0.08 to 0.25) located at various distances from the (Ga,Mn)As layer. The radiation energy density of an LPX-200 pulsed excimer laser was varied during the experiments from 200 to 360 mJ/cm², and the depth of the laser action was determined from the changes in the photoluminescence spectra of the quantum wells. The results are described using the laser annealing model based on the solution of the problem of heat propagation in a one-dimensional GaAs system, taking into account a (Ga,Mn)As layer on the surface. The changes in the structural and galvanomagnetic properties of the samples under action of laser irradiation are analyzed. It is shown that the pulsed laser irradiation with the laser radiation energy density 250–300 mJ/cm² enable one to conserve the emitting properties of the active region (quantum wells InGaAs/GaAs) disposed at the distances 10–12 nm from the (Ga,Mn)As layer and to modify the ferromagnetic properties of the (Ga,Mn)As semiconductor, namely, to increase the ferromagnet–paramagnet phase transition temperature to values no lower than 120 K. The results are promising for the development of the technology of devices of spin optoelectronics.

中文翻译：

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准分子激光脉冲对具有（Ga，Mn）As层的InGaAs / GaAs发光结构的作用

摘要

研究了通过激光退火改变量子尺寸的InGaAs / GaAs结构表面上的（Ga，Mn）As层的性能并保留其发光性能的可能性。为了通过MOC氢化物外延和脉冲激光沉积方法的组合进行这些研究，结构已经制备了四个量子阱InGaAs / GaAs（铟含量从0.08到0.25），这些量子阱位于距（Ga，Mn ）作为图层。在实验过程中，LPX-200脉冲准分子激光器的辐射能量密度从200到360 mJ / cm ^2改变，并根据量子阱的光致发光光谱的变化确定激光作用的深度。考虑到表面上的（Ga，Mn）As层，使用激光退火模型描述了结果，该模型基于一维GaAs系统中的热传播问题解决方案。分析了样品在激光辐照作用下的结构和电磁性能的变化。结果表明，脉冲激光辐照的激光辐射能量密度为250–300 mJ / cm ² 使人们能够保存与（Ga，Mn）As层相距10–12 nm处的有源区（量子阱InGaAs / GaAs）的发射特性，并修改（Ga，Mn）As半导体的铁磁特性也就是将铁磁体-顺磁体的相变温度提高到不低于120K。这一结果对于自旋光电器件技术的发展是有希望的。