Transition metal dichalcogenide (TMD) semiconductors are attracting much attention in research regarding device physics based on their unique properties that can be utilized in spintronics and valleytronics. Although current studies concentrate on the monolayer form due to the explicitly broken inversion symmetry and the direct band gap, bulk materials also hold the capability of carrying spin and valley current. In this study, we report the methodology to continuously control the spin-orbit coupling (SOC) strength of bulk TMDs Mo_1-xW_xSe₂ by changing the atomic ratio between Mo and W. The results show the size of band splitting at the K valley the measure of the coupling strength is linearly proportional to the atomic ratio of Mo and W. Our results thus demonstrate how to precisely tune the SOC coupling strength, and the collected information of which can serve as a reference for future applications of bulk TMDs.

过渡金属二硫化碳（TMD）半导体因其可用于自旋电子学和硅谷电子学中的独特特性而在器件物理方面的研究中引起了人们的极大关注。尽管当前的研究由于明显破坏了反演对称性和直接的带隙而将注意力集中在单层形式上，但块状材料也具有携带自旋和谷值电流的能力。在这项研究中，我们报告了可连续控制散装TMD Mo _1-x W _x Se ₂的自旋轨道耦合（SOC）强度的方法 通过改变Mo和W的原子比。结果表明，在K谷处的能带分裂大小是耦合强度的度量与Mo和W的原子比成线性比例。因此，我们的结果证明了如何精确地调节SOC耦合强度及其收集的信息可作为批量TMD未来应用的参考。