Ferroelectric hafnium oxide (HfO₂) is considered a very prospective material for applications in integrated devices due to its considerably large spontaneous polarization and superior thickness scaling. In fact, the evolution of the ferroelectric hysteresis upon field cycling plays an important role in most applications; especially the so‐called wake‐up effect that describes the increase of remanent polarization for initial field cycling, needs a profound understanding in HfO₂. Herein, the discovery of electric field–induced crystallization in hafnium oxide is reported. In addition, differences in the wake‐up behavior are addressed that finally can be categorized into five different cases, all being relevant when describing the evolution of ferroelectricity. Moreover, analysis of the temperature dependence and transmission Kikuchi diffraction provides insight into the underlying physical mechanisms of different wake‐up behavior scenarios, and proves ferroelastic switching as the origin for the observed antiferroelectric‐like behavior. This knowledge provides clear procedures of 1) how to experimentally quantify and 2) how to prepare and manufacture hafnium oxide phases for the five different wake‐up types.

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关于铁电氧化of中的唤醒和反铁电行为的起源

铁电氧化ha（HfO ₂）由于其相当大的自发极化和出色的厚度缩放性，因此被认为是用于集成设备中的非常有前景的材料。实际上，在大多数应用中，场循环时铁电磁滞的发展起着重要作用；特别是所谓的唤醒效应，它描述了初始场循环中剩余极化的增加，需要对HfO ₂有深刻的理解。在此，报道了在氧化induced中电场诱导的结晶的发现。此外，还解决了唤醒行为的差异，最终可以将其归类为五种不同的情况，当描述铁电的演变时，所有这些情况都是相关的。此外，对温度依赖性和透射菊池衍射的分析提供了对不同唤醒行为情景的潜在物理机制的洞察力，并证明了铁弹性转换是观察到的类似反铁电行为的起源。该知识提供了以下清晰的程序：1）如何进行实验量化； 2）如何准备和制造五种不同唤醒类型的氧化ha相。