We report on the measurements of the spectra of gamma radiation generated by 855 MeV electrons in bent silicon and germanium crystals at MAMI (MAinzer MIkrotron). The crystals were 15 \(\upmu \text {m}\) thick along the beam direction to ensure high deflection efficiency. Their (111) crystalline planes were bent by means of a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature. In such a way it was possible to investigate the radiation emitted under planar channeling and volume reflection as a function of the curvature of the crystalline planes. We showed that, using volume reflection, intense gamma radiation can be produced – with intensity comparable to that obtained in channeling but with higher angular acceptance. We studied the trade-off between radiation intensity and angular acceptance at different values of the crystal curvature. The measurements of radiation spectra have been carried out for the first time in bent germanium crystals. In particular, the intensity of radiation in the germanium crystal is higher than in the silicon one due to the higher atomic number, which is important for the development of the X-ray and gamma radiation sources based on higher-Z deformed crystals, such as crystalline undulators.

我们报告了855 MeV电子在MAMI（MAinzer MIkrotron）的弯曲硅和锗晶体中产生的伽马辐射光谱的测量结果。晶体为15  \（\ upmu \ text {m} \）沿光束方向的厚度较大，以确保较高的偏转效率。它们的（111）晶面通过压电驱动的机械支架弯曲，从而可以远程改变晶体曲率。以这种方式，有可能研究在平面沟道和体积反射下发射的辐射，它们是晶面曲率的函数。我们表明，使用体积反射，可以产生强烈的伽玛射线-强度与在通道中获得的强度相当，但具有更高的角度接受度。我们研究了在不同曲率值下辐射强度和角度接受之间的权衡。辐射光谱的测量首次在弯曲的锗晶体中进行。尤其是，