The operation frequency of memristor seriously affects its applications in high-frequency working conditions. In this article, a new method using a sine-based function instead of the linear term in memristor models to spread the operation frequency ranges of memristor emulators is proposed. Via using this method on a flux-controlled memristor with smooth continuous cubic function as an example, research shows that the operation frequency range of this improved flux-controlled memristor is spread greatly. In particular, the improved memristor can still display an excellent pinched hysteresis loop even when the operation frequency is up to a few gigahertz, which is higher than most of the previously reported memristor emulators. The typical dynamic characteristics and the operation frequency range of the improved memristor are studied theoretically and numerically. The circuit simulations and physical experiments agree well with the theoretical analyses, which together demonstrate the effectiveness of the proposed methodology. Then, the improved memristor is applied to realize a chaotic oscillator to show its practical applications. In addition, the new method has universality, and it can be used by many other existing memristor emulators for spreading their operation frequency ranges.

中文翻译：

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通过基于正弦波的新方法扩展忆阻器仿真器的工作频率范围

忆阻器的工作频率严重影响其在高频工作条件下的应用。本文提出了一种使用正弦函数代替忆阻器模型中线性项来扩展忆阻器仿真器工作频率范围的新方法。以具有光滑连续三次函数的磁通量忆阻器为例，研究表明该改进型磁通量忆阻器的工作频率范围得到了较大的扩展。尤其是，改进的忆阻器即使在工作频率高达几千兆赫兹时也仍然可以显示出色的收缩磁滞回线，这比以前报道的大多数忆阻器仿真器都高。从理论上和数值上研究了改进型忆阻器的典型动态特性和工作频率范围。电路仿真和物理实验与理论分析吻合得很好，它们一起证明了所提出方法的有效性。然后，将改进的忆阻器应用于实现混沌振荡器以展示其实际应用。此外，新方法具有通用性，并且可以被许多其他现有的忆阻器仿真器用来扩展其工作频率范围。