We report the design and fabrication of a high-speed GeSn normal-incidence p-i-n photodetector. To realize high-speed detection in all telecommunication bands, we optimize the Sn content in the absorption layer, the absorption-layer thickness, and the device size. The responsivity of the 18-μm-diameter device at 1550 nm reaches 0.32 A/W with an extended cutoff wavelength of 1700 nm and a 3-dB bandwidth as high as 28 GHz under −3 V bias, clear open eye diagrams are also obtained under zero bias at 1630 nm. All the results indicate that the device has a significant potential for applications in Si-based optical telecommunication in all telecommunication bands.

中文翻译：

---

覆盖所有电信频段的高性能GeSn光电探测器

我们报告了高速GeSn垂直入射引脚光电探测器的设计和制造。为了实现所有电信频段的高速检测，我们优化了吸收层中的Sn含量，吸收层厚度和器件尺寸。直径为18μm的器件在1550 nm处的响应度达到0.32 A / W，在-3 V偏置下具有1700 nm的扩展截止波长和高达28 GHz的3-dB带宽，还获得了清晰的睁眼图在1630 nm的零偏压下 所有结果表明，该器件在所有电信频段中的基于Si的光电信中都有着巨大的应用潜力。