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Millimeter-Wave GaN Devices for 5G: Massive MIMO Antenna Arrays for Sub-6-Ghz and mm-Wave Bandwidth
IEEE Microwave Magazine ( IF 3.7 ) Pub Date : 2021-04-01 , DOI: 10.1109/mmm.2021.3056936
Akira Inoue 1
Affiliation  

Semiconductor technology plays an important role in realizing the 5G mobile communication system. One of the technical objectives for 5G is to significantly boost cellular network throughput-by 100 times compared with 4G (to achieve a peak data rate of > 10 Gb/s) [1]. Achieving this goal will require massive multiple input/multiple output (MIMO) antenna technology [2], [3].

中文翻译:


适用于 5G 的毫米波 GaN 器件:适用于 6 Ghz 以下和毫米波带宽的大规模 MIMO 天线阵列



半导体技术在实现5G移动通信系统中发挥着重要作用。 5G 的技术目标之一是与 4G 相比,显着提高蜂窝网络吞吐量 100 倍(实现 > 10 Gb/s 的峰值数据速率)[1]。实现这一目标将需要大规模的多输入/多输出 (MIMO) 天线技术 [2]、[3]。
更新日期:2021-04-01
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