Nitrogen-doped Li_1+xAl_xGe_2-x(PO₄)₃ (LAGP) thin films were prepared by magnetron sputtering in a mixture of Ar + N₂ using an LAGP powder target. The as-deposited films were amorphous, but could be crystallised into the NASICON LAGP phase after annealing at temperatures above 550 °C. The introduction of nitrogen to the sputtering gas has two effects on the deposited films; incorporation of a low concentration of nitrogen into the LAGP phase but also reduction of the rate of deposition. The former leads to improvements in Li ion conductivity whereas the latter can cause porosity and discontinuities in the films and limits their application in solid state devices. Up to 23% nitrogen in the sputtering gas the first effect is dominant and the total ionic conductivity improves without introducing morphological defects. However if the nitrogen content is increased further, the porosity decreases the measured conductivity. Optimised nitrogen doping in the sputtered LAGP films results in ionic conductivities as high as 2.3 × 10⁻⁴ S cm⁻¹ in films only 1 μm thick (2.7 times higher than undoped LAGP films) and activation energies below 0.38 eV.

通过磁控溅射在Ar + N ₂的混合物中制备氮掺杂的Li _{1 + x} Al _x Ge _2-x（PO ₄）₃（LAGP）薄膜使用LAGP粉末目标。沉积的薄膜是非晶态的，但在高于550°C的温度下退火后可以结晶成NASICON LAGP相。将氮引入溅射气体中对沉积的膜有两个影响：在LAGP相中加入低浓度的氮，但也会降低沉积速率。前者可改善锂离子电导率，而后者可导致薄膜中的孔隙和不连续性，并限制其在固态器件中的应用。溅射气体中的氮含量最高为23％时，第一个作用是主要的，总离子电导率得到改善，而不会引入形态缺陷。但是，如果进一步增加氮含量，则孔隙率会降低测得的电导率。在仅1μm厚的薄膜中为^-4  S cm ^-1（比未掺杂的LAGP薄膜高2.7倍），活化能低于0.38 eV。