With the recent advances in carbon nanotube (CNT) electronics, transistors made of thin films of single wall CNTs (SWNTs) are gaining great attention due to their high quality electrical characteristics. With such improvements it has become essential to develop suitable models to accurately predict the electrical transport in such devices which in the current scenario remains scarce. This work presents a numerical simulation of current transport in SWNT thin film-based transistors (TFTs). The developed model considers both Ohmic and Schottky type contacts that are exhibited by such field effect transistors based on which two separate modes of transport for electrons and holes are described. The electron transport is described through a tunneling transmission process while the hole transport is described by a thermionic transmission process where the model treats each SWNT individualistically and determines the overall current through a novel iterative process. The accuracy of the proposed model is verified by comparing it with multiple experimental data.

随着碳纳米管（CNT）电子学的最新进展，由单壁CNT（SWNT）薄膜制成的晶体管由于其高质量的电气特性而受到了广泛的关注。通过这样的改进，开发合适的模型以准确地预测在当前情况下仍然稀缺的此类设备中的电传输已变得至关重要。这项工作提出了SWNT薄膜晶体管（TFT）中电流传输的数值模拟。所开发的模型考虑了这种场效应晶体管所表现出的欧姆和肖特基两种类型的触点，基于它们描述了电子和空穴的两种单独的传输方式。电子传输通过隧穿传输过程进行描述，而空穴传输通过热电子传输过程进行描述，在该模型中，模型将个性化地处理每个SWNT，并通过新颖的迭代过程确定总电流。通过将其与多个实验数据进行比较，验证了所提模型的准确性。