We report current–voltage (I–V) device characteristics of pulsed laser deposition (PLD) grown La_0.5Gd_0.2Ca_0.3MnO₃ (LGCMO) manganite thin films on single crystalline (100) Nb:SrTiO₃ (SNTO) substrates. LGCMO films were irradiated using 100 MeV O⁺⁹ swift heavy ions (SHI). The θ–2θ X–ray diffraction (XRD) and atomic force microscopy (AFM) measurement were performed at room temperature, respectively, for understanding the structural and microstructural behaviors of the films. The current–voltage (I–V) data were taken under the bias voltage applied across LGCMO/SNTO p–n interfaces at room temperature. Observed I–V behaviors for all interfaces have been discussed in the context of lattice strain, grain size and grain boundary density. To study the effect of annihilation on the irradiated LGCMO films, 50 nm thick ZnO layer was grown on the surface of LGCMO/SNTO films using chemical solution deposition (CSD) method under oxygen environment with a controlled flow. XRD, AFM and I–V measurements were performed again for annealed ZnO/LGCMO interfaces. Observed I–V characteristics across ZnO/LGCMO interface have been discussed in details in the context of annihilation induced modifications in the interface, structural strain and surface morphology.

我们报告了在单晶（100）Nb：SrTiO ₃（SNTO）衬底上生长的La _0.5 Gd _0.2 Ca _0.3 MnO ₃（LGCMO）锰矿薄膜的脉冲激光沉积（PLD）的电流-电压（IV）器件特性。使用100 MeV O ⁺⁹辐照LGCMO膜快速重离子（SHI）。分别在室温下进行θ-2θX射线衍射（XRD）和原子力显微镜（AFM）测量，以了解薄膜的结构和微观结构行为。电流-电压（IV）数据是在室温下在LGCMO / SNTO p-n接口上施加的偏置电压下得出的。已经在晶格应变，晶粒尺寸和晶界密度的背景下讨论了所有界面的观察到的IV行为。为了研究of灭对被辐照的LGCMO薄膜的影响，在氧气环境下，采用化学溶液沉积（CSD）方法，在可控流量下，在LGCMO / SNTO薄膜的表面上生长了50 nm厚的ZnO层。再次对退火的ZnO / LGCMO界面进行XRD，AFM和I–V测量。