Cadmium Telluride (CdTe) has a band gap of 1.5 eV at room temperature and is considered to be the most promising material for optoelectronic application. In the present work, we have selected the Bridgman grown CdTe single crystal and characterized it by Energy Dispersive Analysis of X-Rays (EDAX), Raman Spectroscopy, Photoluminescence Spectroscopy and Thermal Analysis techniques. EDAX has shown that there are no impurity elements present in CdTe sample and thereby proved its stoichiometry. We did Raman mapping up to the depth of 10 μm from the surface which has shown A₁ mode at 121 cm⁻¹ and TO mode at 140 cm⁻¹. Raman spectra at low temperature from 80 K to 300 K is also studied on this sample. The photoluminescence spectra taken at room temperature with different excitation wavelength shows emission in different regions of the visible spectrum and IR region. TGA/DTA curves are recorded at three different heating rates from where we calculated various kinetic parameters. The I – V characteristics of prepared CdTe single crystal photodetector is measured at room temperature as well as low temperature up to 75 K. Pulse photoresponse at different biasing voltages at 50 mW/cm² is recorded. Various parameters i.e. photocurrent, responsivity and detectivity from I – V characteristics has been determined. Photoconductivity measurements at different biasing voltage and at different polarizing angle is also carried out. The results obtained are explained in the paper in detail.

碲化镉（CdTe）在室温下的带隙为1.5 eV，被认为是光电应用中最有希望的材料。在当前的工作中，我们选择了Bridgman生长的CdTe单晶，并通过X射线能量色散分析（EDAX），拉曼光谱，光致发光光谱和热分析技术对其进行了表征。EDAX已表明CdTe样品中不存在杂质元素，从而证明了其化学计量。我们进行了拉曼映射，直到从表面到10μm的深度为止，在121 cm ^-1处显示A ₁模式，在140 cm ^-1处显示TO模式。在此样品上还研究了从80 K到300 K的低温拉曼光谱。在室温下以不同的激发波长获得的光致发光光谱显示出在可见光谱和IR区域的不同区域的发射。在我们计算各种动力学参数的三种不同加热速率下记录了TGA / DTA曲线。制备的CdTe单晶光电探测器的I–V特性在室温以及高达75 K的低温下均进行了测量。在50 mW / cm ^2的不同偏置电压下的脉冲光响应被记录。已经确定了I–V特性的各种参数，例如光电流，响应度和检测度。还可以在不同的偏置电压和不同的偏振角下进行光电导率测量。本文详细解释了获得的结果。