A π-conjugated 4,4-difluoro-4- bora-3a,4a-diaza-s-indacene (BODIPY) dimer (BOD-Dim) compound has been synthesized and characterized. The optimized molecular structure, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) simulations, and static isotropic polarizability of the isolated compound were computed via the Gaussian program. The simulated static dielectric constant value was calculated. The effect of the BOD-Dim interlayer on the diode characteristics of the Au/n-Si diode was investigated. The electrical and photovoltaic parameters of the Au/BOD-Dim/n-Si/In diode such as ideality factor (n), barrier height (Φ_B), open-circuit voltage (V_oc), short-circuit current (J_sc), photosensitivity (S), and photoresponsivity (R) have been investigated by current-voltage measurements at dark and under various illumination intensities. The possible current conduction mechanism has been examined through the forward bias ln(I_F)-ln(V_F) and ln(I_R)-V_R^1/2 characteristics. All obtained results confirmed that Au/BOD-Dim/n-Si/In diode exhibits a photovoltaic behavior and presents great potential as a photosensor for optoelectronic device applications.

合成并表征了一种π-共轭的4,4-二氟-4-硼3a，4a-二氮杂-s-茚并二烯（BODIPY）二聚体（BOD-Dim）化合物。通过高斯程序计算了分离化合物的最佳分子结构，最高占据分子轨道（HOMO）和最低未占据分子轨道（LUMO）模拟以及静态各向同性极化率。计算了模拟的静态介电常数值。研究了BOD-Dim中间层对Au / n-Si二极管的二极管特性的影响。在Au / BOD-DIM的电气和光电参数/正的Si /在二极管如理想因子（Ñ），势垒高度（Φ_乙），开路电压（V _OC），短路电流（Ĵ_sc），光敏性（ S）和光敏性（ R）已通过在黑暗和各种照明强度下的电流-电压测量进行了研究。通过正向偏置ln（ I _F） -ln（ V _F）和ln（ I _R） -V _R ^1/2特性研究了可能的电流传导机制。所有获得的结果证实，Au / BOD-Dim / n-Si / In二极管具有光电性能，并作为光电器件应用的光电传感器具有巨大的潜力。