The paper reports successful fabrication of CdS/CdTe and ZnS/CdTe heterojunctions by a combination of two different deposition techniques viz. successive ionic layer adsorption and reaction (SILAR) and conventional vacuum deposition. The SILAR deposited CdS and ZnS layers formed well adherent and stable heterojunctions with the vacuum deposited CdTe. The electrical characteristics of the heterojunctions were analyzed by thermionic emission model and Cheung's model. The ideality factor, series resistance, barrier height, space charge density and thickness of the depletion region were determined by rigorous I–V, J-V and C–V characterization. The barrier heights of the devices were found to be in the range of 0.8 eV–0.9 eV. The thickness of the depletion region was found to be 5.2 nm and 7.1 nm while the space charge density was found to be 3.6 × 10²² m⁻³ and 1.59 × 10²¹ m^-3, respectively, for CdS/CdTe and ZnS/CdTe heterojunctions.

本文报道了通过结合两种不同的沉积技术成功制造CdS / CdTe和ZnS / CdTe异质结的方法。连续的离子层吸附和反应（SILAR）以及常规的真空沉积。SILAR沉积的CdS和ZnS层与真空沉积的CdTe形成了良好的粘附性和稳定的异质结。通过热电子发射模型和Cheung模型分析了异质结的电学特性。理想因子，串联电阻，势垒高度，空间电荷密度和耗尽区厚度由严格的I–V，JV和C–V特性确定。发现器件的势垒高度在0.8 eV–0.9 eV的范围内。发现耗尽区的厚度为5.2nm和7.1nm，而发现空间电荷密度为3。²² 米^-3和1.59×10 ²¹米^- 3，分别为CDS /碲化镉和ZnS / CdTe的异质结。