This paper presents a novel topology for multipurpose drivers for MEMS sensors and actuators, suitable for integration in low-cost high-voltage (HV) CMOS processes, without a triple well. The driver output voltage, , can be programmed over a wide, symmetrical range of positive and negative values, with the maximum output voltage being limited only by the maximum drain-source voltage that the HV transistors can handle. The driver is also able to short its output to the ground line and to leave it floating. It comprises generators for large positive and negative voltages followed by an LDO for each polarity that ensures that has a well-controlled level and a very low ripple. The LDOs also help implement the grounded- and floating-output operating modes. Most of the required circuitry is integrated within a HV CMOS ASIC: the drivers for the large voltage generators, the error amplifiers of the LDOs, the DAC used to program the level, and their support circuits. Thus, only the power stages of the large voltage generators, the pass transistors of the LDOs and two resistors for the LDO feedback network are discrete. A suitable configuration was devised for the latter that allows for the external resistor network to be shared by the two LDOs and prevents negative voltages from developing at the ASIC pins. Two circuit implementations of the proposed topology, designed in a low-cost 0.18 μm HV CMOS process, are presented in some detail. Simulation results demonstrate that they realize the required operating modes and provide voltages programmable with steps of 100 mV or 200 mV, between -20 V and +20 V or between −45 V and +45 V, respectively. The output voltage ripple is relatively small, just 3.4 mVpkpk for the first implementation and 17 mVpkpk for the second. Therefore, both circuits are suitable for biasing and controlling a wide range of MEMS devices, including MEMS mirrors used in applications such as endoscopic optical coherence tomography.

中文翻译：

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基于MEMS的MEMS驱动器的多用途驱动器，采用低成本HV CMOS工艺实现，无需三阱，可实现单一ASIC

本文提出了一种适用于MEMS传感器和执行器的多功能驱动器的新型拓扑，该拓扑适用于低成本高压（HV）CMOS工艺的集成，而无需三阱。驱动器输出电压，，可以编程在正值和负值的宽，对称的范围内，最大输出电压由所述最大漏源电压，所述HV晶体管只能处理的限制。驱动器还可以将其输出短路到地线并使它悬空。它包括用于产生较大正电压和负电压的发生器，以及用于每种极性的LDO，以确保具有良好控制的电平和非常低的纹波。LDO还有助于实现接地输出和浮动输出操作模式。所需的大多数电路都集成在HV CMOS ASIC中：大型电压发生器的驱动器，LDO的误差放大器，用于对该电平进行编程的DAC及其支持电路。因此，只有大型电压发生器的功率级，LDO的传输晶体管和LDO反馈网络的两个电阻器是离散的。为后者设计了一种合适的配置，该配置允许两个LDO共享外部电阻器网络，并防止在ASIC引脚上产生负电压。所提出的拓扑的两个电路实施方式中，在一个低成本0.18设计 μ在HV CMOS工艺中，进行了详细介绍。仿真结果表明，它们实现了所需的工作模式，并提供了100 mV或200 mV的可编程电压，分别在-20 V和+20 V之间或在-45 V和+45 V之间。输出电压纹波相对较小，第一种实现仅为3.4 mVpkpk，第二种实现为17 mVpkpk。因此，这两种电路均适用于偏置和控制各种MEMS器件，包括在诸如内窥镜光学相干断层扫描等应用中使用的MEMS反射镜。