In this paper, a series of CuIn_1-xGa_xTe₂ samples were prepared by vacuum melting combined with the spark plasma sintering process based on the initial stoichiometric ratios of 1: 1-x: x: 2 (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0). Crystal results indicate that all Cu(In, Ga)Te₂ system samples are the chalcopyrite structure with space group $\text{I}\bar{4}2\text{d}$. Thermal analysis results show that all the samples have excellent reproducibility and thermal stability. EPMA data indicates that Ga tended to replace In site instead of Cu or Te. Meanwhile, the room-temperature carrier concentration of all p-type samples varies from 0.30 × 10¹⁹ to 1.25 × 10¹⁹cm⁻³, since carrier mobility changes from 15.16 to 69.27 cm² V⁻¹ s⁻¹. Ultimately, the significantly reduced total thermal conductivity is observed in the Ga-doped samples, and the maximum ZT value of 0.80 is obtained at 773 K for the CuIn_0.8Ga_0.2Te₂ sample due to the lower thermal conductivity.

本文基于初始化学计量比为1：1- x：x：2（x  = 0，0.1）的真空熔融结合火花等离子体烧结工艺制备了一系列CuIn _{1- x} Ga _x Te ₂样品，0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9和1.0）。晶体结果表明，所有Cu（In，Ga）Te ₂系统样品均为具有空间群的黄铜矿结构。$\text{一世}\stackrel{〜}{4}\mathrm{2个}\text{d}$。热分析结果表明，所有样品均具有优异的重现性和热稳定性。EPMA数据表明，Ga倾向于取代In位而不是Cu或Te。同时，由于载流子迁移率从15.16cm ²变为69.27cm ²  V ^-1  s ^-1，所以所有p型样品的室温载流子浓度在0.30×10 ¹⁹至1.25×10 ¹⁹ cm ^-3之间变化。最终，在掺杂Ga的样品中观察到总热导率显着降低，对于CuIn _0.8 Ga _0.2 Te ₂在773 K下获得的最大ZT值为0.80 样品由于较低的热导率。