Indeno-fluorene compounds have been applied as organic field-effect transistors. Indeno[1,2-b]flourene-6,12dione (IF-dione) films of different film thickness have been obtained using a thermal evaporating technique. The XRD analysis revealed that the crystalline nature of the IF-dione films with thickness beyond 150 nm had been boosted by increasing the film thickness. The increase of the film thickness from 150 nm to 540 nm led to a rise in the mean crystallite size values from 11.65 to 19.16 nm. The variation of the electrical conductivity of IF-dione thin films with the reciprocal temperatures showed that the thermal activation energy of the sample had been diminished as the film thickness increases. Mott's hopping of variable range conduction operation explained the behavior of the conductivity. The study of the current-density-voltage (J-V) characteristics of IF-dione thin-film confirmed that the Ohmic conduction mechanism is dominant below a threshold voltage (V_t), whereas the space charge limited conduction has been satisfied beyond V_t. It was found that the total trap concentration values are compatible with the other organic molecules. Also, many electrical parameters have been evaluated for different film thicknesses.

茚芴化合物已被用作有机场效应晶体管。茚并[1,2- b使用热蒸发技术已经获得了不同厚度的]氟-6,12二酮（IF-二酮）薄膜。XRD分析表明，厚度增加到150nm以上的IF-二酮薄膜的晶体性质得到了增强。膜厚度从150 nm增加到540 nm导致平均微晶尺寸值从11.65增加到19.16 nm。IF-二酮薄膜的电导率随温度的变化而变化，表明样品的热活化能随着膜厚的增加而减小。莫特在可变范围传导操作中的跳跃解释了传导率的行为。电流密度电压（JV）的研究IF-dione薄膜的特性）证实，在阈值电压（V _t）以下，欧姆传导机制占主导地位，而超过V _t的空间电荷限制传导已得到满足。发现总陷阱浓度值与其他有机分子相容。而且，已经针对不同的膜厚度评估了许多电参数。