In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 $\mu \text{m}^{2}$ gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.

中文翻译：

---

利用准静态近似的改进晶体管建模方法

本文提出了一种新的建模技术，用于提取微波晶体管的小信号集总元件等效电路模型。所提出的过程基于使用优化方法的改进，该优化方法通过将准静态行为作为附加目标函数进行改进，而不是仅使模拟散射参数和测量散射参数之间的误差最小。通过考虑0.25x1000成功地证明了开发的建模方法的有效性 $ \ mu \ text {m} ^ {2} $ 以氮化镓（GaN）高电子迁移率晶体管（HEMT）为例。