This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion (DD) transport approach, which can account for the ballistic effect in short-channel devices. The KVM considers a thermionic emission limit and a free carrier acceleration limit for the mobility. We develop a methodology to extract the parameters for the KVM and for the high-field saturation velocity model for SiGe nanowires over the whole mole fraction range. The calibrated DD simulations with KVM show good agreement with Boltzmann transport equation results in terms of on-state current and carrier-weighted velocity distribution over a wide range of gate lengths for both linear and saturation regimes.

中文翻译：

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基于运动速度模型的SiGe纳米线MOSFET的准弹道漂移扩散模拟

本文介绍了漂移-扩散（DD）传输方法中新型动力学速度模型（KVM）的校准，该模型可以解释短通道设备中的弹道效应。KVM考虑迁移率的热电子发射极限和自由载流子加速极限。我们开发了一种方法，可在整个摩尔分数范围内提取KGe和SiGe纳米线的高场饱和速度模型的参数。用KVM校准的DD模拟表明，在线性和饱和状态下，在很宽的栅极长度范围内，导通状态电流和载流子加权速度分布方面都与Boltzmann输运方程式结果吻合良好。