A thin film thickness meter was developed that is essential for thin film thickness management in the manufacturing process of flat panel displays such as touch panels and touch screens. The thickness measurement method of the meter is based on four-point probe method (Arther Uhlir in The Potentials of Infinite Systems of Sources and Numerical Solutions of Problems in Semiconductor Engineering 34:105-128, 1955; Valdes in Resistivity Measurements on Germaniumfor Transistors 42:420-427, 1954) and in the method, a thickness is determined by dividing the known electrical resistivity of a thin film material by the sheet resistance, and the thin film thickness measurement range is practically 1 nm–1 mm although the performance of the meter was confirmed in the range of 2.2 nm–22 μm. In order to conveniently measure the thickness of a thin film sample at a desired (to be measured) position, a probe station and a four-point probe were made. Place the four-point probe and the thin film sample at the probe station. When the four-point probe is brought into contact with the surface of the thin film sample using the upper and lower control knobs, the thickness measurement value is displayed on the meter, so the thickness of the thin film can be measured quickly and accurately. In addition, 5 types of samples such as Pd, Al, Au, Nb, and Cu were used to confirm the performance of the measuring device for the thin film thickness measurement function. For sample preparation, 5 types of samples were deposited on a silicon wafer with 75 mm in diameter, and the thickness was measured within 10 mm of the center of the sample, and the thickness of the cross-section was observed by SEM and TEM. As the result, the agreement for the thickness values between by the measurement results and SEM or TEM was confirmed in the range of 14 nm–1.6 μm.

开发了一种薄膜厚度计，该厚度计对于在诸如触摸面板和触摸屏之类的平板显示器的制造过程中的薄膜厚度管理是必不可少的。仪表的厚度测量方法基于四点探针法（Arther Uhlir在1955年的半导体工程中的无限源系统和问题的数值解中的电势；晶体管上的锗电阻率测量中的Valdes值42 ：420-427，1954年），在该方法中，通过将薄膜材料的已知电阻率除以薄层电阻来确定厚度，尽管仪器被确认在2.2 nm–22μm的范围内。为了方便地在期望的（待测量）位置测量薄膜样品的厚度，制作了探针台和四点探针。将四点探针和薄膜样品放在探针台上。当使用上，下控制旋钮使四点探针与薄膜样品的表面接触时，测厚仪上会显示厚度测量值，因此可以快速而准确地测量薄膜的厚度。另外，使用Pd，Al，Au，Nb和Cu等5种样品来确认用于薄膜厚度测量功能的测量装置的性能。为了进行样品制备，将5种类型的样品沉积在直径75毫米的硅片上，并在距离样品中心10毫米的范围内测量厚度，并通过SEM和TEM观察横截面的厚度。结果，在14 nm–1.6μm的范围内，测量结果与SEM或TEM之间的厚度值一致。