ABSTRACT

Design and simulation of variable gain analog buffer amplifier using single gate reconfigurable field-effect transistor (SG-RFET) with strained silicon channel are proposed. The design simplicity makes SG-RFET device a potential candidate compared to the multi-gate RFET devices. The gain of the proposed configuration is varied by tuning the feedback voltage. The voltage gain of the proposed configuration can be tuned from 0.97 V/V to 5 V/V with an output load of 1 kΩ. The operational transconductance amplifier (OTA) using the SG-RFET device is used in the proposed buffer amplifier design.

中文翻译：

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用于简单可变增益缓冲放大器设计的高性能可重构 FET

摘要

提出了使用具有应变硅沟道的单栅极可重构场效应晶体管（SG-RFET）的可变增益模拟缓冲放大器的设计和仿真。与多栅极 RFET 器件相比，设计简单性使 SG-RFET 器件成为潜在的候选者。建议配置的增益通过调整反馈电压来改变。建议配置的电压增益可在 1 kΩ 输出负载下从 0.97 V/V 调整至 5 V/V。在所提出的缓冲放大器设计中使用了使用 SG-RFET 器件的运算跨导放大器 (OTA)。