In this paper, we proposed an equivalent circuit of a cell device (high-voltage silicon diode), considering effects of temperature and reverse voltage on it, and obtained the analytical expression of impedance of a cell device. Subsequently, in order to improve the reverse voltage distribution of the high-voltage diode stack consisting of a serial connection of cell devices, uniform voltage impedance was inserted in parallel with each cell device. Taking into account the impedance and the uniform voltage impedance of each cell device but also the leakage impedances connected to high-voltage terminal and ground terminal, the most generalized equivalent circuit of the high-voltage diode stack was newly proposed, from which the analytical expression on the reverse voltage applied to each cell device was obtained. Consequently, analyzing the ratio of the uniform voltage impedance to the impedance of a cell device and the non-uniformity of the reverse voltage distribution, the way to improve the reverse voltage distribution of the high-voltage diode stack was found, and it was verified experimentally. Finally, the possibility to estimate the reverse voltage distribution of the high-voltage diode stack quantitatively was supported by an analytical method, not experimental method.

在本文中，我们考虑到温度和反向电压对其的影响，提出了一种电池器件（高压硅二极管）的等效电路，并获得了电池器件阻抗的解析表达式。随后，为了改善由电池单元装置的串联连接组成的高压二极管堆叠的反向电压分布，将均匀的电压阻抗与每个电池单元装置并联地插入。考虑到每个电池装置的阻抗和均匀的电压阻抗，以及与高压端子和接地端子相连的泄漏阻抗，新提出了最通用的高压二极管叠层等效电路，由其解析表达式获得了施加到每个电池装置的反向电压的最大值。所以，通过分析电池单元的均匀电压阻抗与阻抗的比值以及反向电压分布的不均匀性，找到改善高压二极管叠层反向电压分布的方法，并进行了实验验证。最后，通过分析方法而非实验方法可以定量地估计高压二极管堆叠的反向电压分布。