当前位置: X-MOL 学术Intermetallics › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Remarkable increase of Curie temperature in doped GdFeSi compound
Intermetallics ( IF 4.3 ) Pub Date : 2021-03-24 , DOI: 10.1016/j.intermet.2021.107183
A.G. Kuchin , S.P. Platonov , A.V. Lukoyanov , A.S. Volegov , V.S. Gaviko , R.D. Mukhachev , M.Yu. Yakovleva

The GdFe1-xTixSi (x = 0–0.2) intermetallic compounds have been studied. They crystallize into the tetragonal CeFeSi (P4/nmm)–type structure. With increasing Ti content, the Curie temperature TC and the lattice parameter c increase quickly for x = 0–0.1 and then, more moderate because of the solubility limit, whereas the saturation magnetization at 4 K and the lattice parameter a remain almost unchanged. The theoretical DFT + U calculations showed that the growth of Ti content affects the electronic structure of GdFe1-xTixSi by significantly increasing the density of electron states at the Fermi level N(EF). At the same time, the total magnetic moment does not change because both Fe and Ti are non-magnetic in these intermetallic compounds. The growth of the density of electron states near the Fermi level is accompanied by the rapid growth of TC in the GdFe1-xTixSi system.



中文翻译:

掺杂GdFeSi化合物的居里温度显着提高

已经研究了GdFe 1- x Ti x Si(x  = 0-0.2)金属间化合物。它们结晶成四方CeFeSi(P 4 / nmm)型结构。随着Ti含量的增加,居里温度T C和晶格参数cx  = 0-0.1时迅速增加,然后由于溶解度极限而更加适中,而4 K时的饱和磁化强度和晶格参数a几乎保持不变。DFT + U理论计算表明,Ti含量的增长会影响GdFe 1- x Ti x的电子结构。通过显着增加费米能级NE F)的电子态密度来提高Si含量。同时,总磁矩不会改变,因为在这些金属间化合物中,Fe和Ti都是非磁性的。电子态密度在费米能级附近的增长伴随着GdFe 1- x Ti x Si系统中T C的快速增长。

更新日期:2021-03-24
down
wechat
bug