Abstract

Measurements are made of the spectra and degrees of circular polarization of radiation from single InAs quantum dots embedded in a planar GaAs waveguide of a semiconductor nanostructure, and an electrically pumped semiconductor laser based on an AlAs/AlGaAs microcavity with GaAs quantum wells in the active region. The upper layers of the microcavity are a square lattice of a photonic crystal with chiral symmetry.

中文翻译：

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圆偏振辐射的半导体注入激光器

摘要

测量来自嵌入在半导体纳米结构的平面GaAs波导中的单个InAs量子点的辐射的光谱和圆偏振度，以及基于AlAs / AlGaAs微腔的电泵浦半导体激光器，该激光器在有源区中具有GaAs量子阱。微腔的上层是具有手性对称性的光子晶体的方格。