Abstract

The effect of the different surface treatment of Hg\({}_{1-x}\)Cd\({}_{x}\)Te (CMT) films before the atomic layer deposition of Al\({}_{2}\)O\({}_{3}\) dielectric on the charge at the dielectric–semiconductor interface has been studied. Metal–dielectric–semiconductor (MDS) structures with different surface treatment before the deposition of a dielectric have been manufactured. The capacitance–voltage characteristics of CMT based MDS structures have been measured alongside with the surface charge density. The surface charge is non-uniformly distributed over the surface of films with \(x=0.22\) and a natural oxide layer and equal to \((0.8{-}1.8)\times 10^{-8}\) C/cm\({}^{2}\), and this may lead to the inversion of the surface conductivity type. The exposure of these CMT structures in mercury vapor at room temperature leads to the formation of a negative charge within a range of \(-(0.4{-}1.6)\times 10^{-8}\) C/cm\({}^{2}\).

中文翻译：

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表面处理对GdHgTe外延膜和Al $$ {} _ {\ mathbf {2}} $$ O $$ {} _ {\ mathbf {3}} $$原子层生长的界面处电荷密度的影响沉积

摘要

汞（{} _ {1-x} \） Cd \（{} _ {x} \） Te（CMT）薄膜的不同表面处理对Al （{} _ { 2} \） O \（{} _ {3} \）在电介质-半导体界面上的电荷上的电介质已经过研究。金属-电介质-半导体（MDS）结构在电介质沉积之前已进行了不同的表面处理。已经测量了基于CMT的MDS结构的电容-电压特性以及表面电荷密度。表面电荷不均匀地分布在具有\（x = 0.22 \）和自然氧化物层且等于\（（0.8 {-} 1.8）×10 ^ {-8} \） C /的薄膜表面上厘米\（{} ^ {2} \），这可能导致表面电导率类型反转。这些CMT结构在室温下暴露于汞蒸气中会导致在\（-（0.4 {-} 1.6）\乘以10 ^ {-8} \） C / cm \（{ } ^ {2} \）。