Abstract

We provide a review of the current state, problems and their solutions, and potential possibilities to develop the technology of the Molecular Beam epitaxy (MBE) to obtain CdHgTe structures on various substrates for infrared detectors. We present the data about MBE supervacuum units control tools for growth processes, collected according to used substrates preparation processes for substrate surfaces, growth of buffer layers on alternating substrates, and growth and alloying of CdHgTe layers. We present main defects of structures (such as line defects and macrodefects) and their least achieved concentration levels limiting the quality of detectors. We consider the data about problems of the external alloying of CdHgTe layers by dopants and the obtained electrophysical parameters of such layers. We provide photoelectric parameters of IR-detectors, close to theoretical ones and showing that the MBE technology is ready to produce CdHgTe/Si structures on six-inch diameters. We demonstrate results of the research and development of the growth and alloying of CdHgTe structures on GaAs substrates and Si substrates of 76.2-mm diameters, implemented at the Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences.

中文翻译：

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CdHgTe的分子束外延：现状和展望

摘要

我们对当前状态，问题及其解决方案以及开发分子束外延（MBE）技术以在用于红外探测器的各种基板上获得CdHgTe结构的技术进行了综述。我们提供有关MBE超级真空单元控制工具的数据，这些工具用于生长过程，根据用于衬底表面的已用衬底制备过程，交替衬底上的缓冲层生长以及CdHgTe层的生长和合金化收集的数据。我们介绍了结构的主要缺陷（例如线缺陷和宏观缺陷），以及它们达到的最低浓度水平限制了检测器的质量。我们考虑了有关掺杂剂对CdHgTe层外部合金化问题的数据以及所获得的此类层的电物理参数的数据。我们提供红外探测器的光电参数，接近理论值，表明MBE技术已准备好生产六英寸直径的CdHgTe / Si结构。我们展示了在直径76.2 mm的GaAs衬底和Si衬底上CdHgTe结构的生长和合金化的研究和开发结果，该结果由俄罗斯科学院西伯利亚分校的拉扎诺夫半导体物理研究所实施。