Abstract

A new type of AlGaAs/InGaAs/GaAs heterostructures with energy barriers formed in the AlGaAs transistor layers adjacent to the InGaAs channel, modulation-doped with donors and acceptors is presented. The height of the barriers associated with the potential of the space charge region in AlGaAs layers reaches 0.8 eV, which makes it possible to double the concentration of electrons in the channel, prevent the transition of hot electrons heated by the electric field into surrounding layers, and increase their saturation drift velocity by around \(1.2{-}1.3\) times. As a result, microwave power output density of the transistor exceeded the world level by more than 50\(\%\).

中文翻译：

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适用于强大pHEMT晶体管的新型异质结构

摘要

提出了一种新型的AlGaAs / InGaAs / GaAs异质结构，其在与InGaAs沟道相邻的AlGaAs晶体管层中形成了能垒，掺有施主和受主。与AlGaAs层中空间电荷区的电势相关的势垒高度达到0.8 eV，这使得可以将沟道中的电子浓度提高一倍，防止被电场加热的热电子跃迁到周围的层中，并使它们的饱和漂移速度提高\（1.2 {-} 1.3 \）倍。结果，晶体管的微波功率输出密度超过了世界水平超过50 \（\％\）。