Abstract

The article presents how the understanding of the fundamental processes of self-organization and morphological transformations of the atomically clean Si(111) surface as a result of the study using in situ ultrahigh vacuum reflection electron microscopy can be applied to metrology. The method of high-resolution transmission electron microscopy is used to show that the native oxide formed on the Si(111) surface in atmospheric conditions replicates the atomic step height with high accuracy. The techniques for creating vertical measures in the range 0.31–31 nm with an error of less than 0.05 nm in the entire measurement range are developed on this basis. It is shown that it is possible to create extremely wide atomically smooth surfaces (up to 230 \(\mu\)m) and use them as reference mirrors in interferometric microscopes. Crystal samples containing a certain number of monoatomic steps and atomically smooth surface areas are included in the State Secondary Reference Standard as a measure of angstrom height and angstrom flatness.

中文翻译：

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从硅表面单原子台阶的自组织到亚纳米计量

摘要

本文介绍了使用原位超高真空反射电子显微镜进行的研究结果如何理解原子清洁的Si（111）表面的自组织和形态转变的基本过程，可以将其应用于计量学。高分辨率透射电子显微镜的方法用于显示在大气条件下形成在Si（111）表面上的天然氧化物可以高度精确地复制原子台阶高度。在此基础上，开发了在0.31–31 nm范围内创建垂直测量且误差在整个测量范围内小于0.05 nm的技术。结果表明，可以创建非常宽的原子光滑表面（最大230 \（\ mu \）m）并将它们用作干涉显微镜中的参考镜。包含一定数量的单原子台阶和原子光滑表面积的晶体样品包含在国家二级参考标准中，作为埃高度和埃平坦度的量度。