A novel integrated design and simulation approach is applied to analyze the performance of a metal–oxide–semiconductor field-effect transistor (MOSFET)-based microelectromechanical systems (MEMS) pressure sensor circuit while varying circuit and CMOS parameters, viz. the supply voltage and threshold voltage (V_t), respectively. For effective mechanical pressure sensing, a sensor MOSFET is integrated near the fixed edge of a deformable silicon diaphragm for maximum stress exposure. The stress value where the sensor MOSFET is located on the diaphragm surface is calculated using the finite-element method (FEM). Additionally, the threshold voltage required to activate the sensor MOSFET is also extracted using the FEM. The extracted value of V_t along with the corresponding gate oxide thickness are used to design and simulate the sensor circuit in the SPICE tool. The FEM-based multiphysics simulation is linked to a standard direct-current (DC) model SPICE simulation using our proposed carrier mobility model for a MOSFET under mechanical stress. All the FEM computations are performed using COMSOL Multiphysics, all the electrical simulations are performed using LT-SPICE, and the full sensor circuit is designed and simulated by integrating COMSOL Multiphysics and LT-SPICE via a MATLAB script. The validity of the design is confirmed by comparing these results with analytical computations. The results obtained using the integrated simulation approach confirm that the design is reliable and enable the sensor performance to be examined in terms of its sensitivity, yielding a value of 30 mV/MPa.

一种新颖的集成设计和仿真方法用于分析基于金属氧化物半导体场效应晶体管（MOSFET）的微机电系统（MEMS）压力传感器电路的性能，同时改变电路和CMOS参数。电源电压和阈值电压（V _t）。为了有效地进行机械压力感测，在可变形硅膜片的固定边缘附近集成了传感器MOSFET，以最大程度地暴露应力。使用有限元方法（FEM）计算传感器MOSFET在膜片表面上的应力值。此外，还使用FEM提取了激活传感器MOSFET所需的阈值电压。V _t的提取值连同相应的栅极氧化层厚度一起用于设计和仿真SPICE工具中的传感器电路。使用我们建议的MOSFET在机械应力下的载流子迁移率模型，基于FEM的多物理场仿真与标准的直流（DC）模型SPICE仿真相关联。所有的FEM计算都是使用COMSOL Multiphysics进行的，所有的电气仿真都是使用LT-SPICE进行的，完整的传感器电路是通过MATLAB脚本通过集成COMSOL Multiphysics和LT-SPICE进行设计和仿真的。通过将这些结果与分析计算进行比较，可以确认设计的有效性。使用集成仿真方法获得的结果证实了该设计是可靠的，并且能够根据其灵敏度来检查传感器性能，从而得出30 mV / MPa的值。