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Energy band adjustment of 808 nm GaAs laser power converters via gradient doping
Journal of Semiconductors ( IF 4.8 ) Pub Date : 2021-03-19 , DOI: 10.1088/1674-4926/42/3/032701
Yingjie Zhao 1, 2 , Shan Li 1, 2 , Huixue Ren 1, 2 , Shaojie Li 1, 2 , Peide Han 1, 2
Affiliation  

The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters (LPCs). Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gradient doping structure, and analyze the transport process of photogenerated carriers. Energy band adjustment via gradient doping improved the separation and transport efficiency of photogenerated carriers and reduced the total recombination rate of GaAs LPCs. Compared with traditional structure of LPCs, the photoelectric conversion efficiency of LPCs with linear and exponential gradient doping structure were improved from 52.7% to 57.2% and 57.7%, respectively, under 808 nm laser light at the power density of 1 W/cm2.



中文翻译:

通过梯度掺杂调整 808 nm GaAs 激光功率转换器的能带

梯度掺杂区域用于基于 GaAs 的激光功率转换器 (LPC) 的发射极层和基极层。Silvaco TCAD用于数值模拟线性梯度掺杂和指数梯度掺杂结构,分析光生载流子的输运过程。通过梯度掺杂调整能带提高了光生载流子的分离和传输效率,降低了GaAs LPCs的总复合率。与传统结构的LPCs相比,在1 W/cm 2功率密度的808 nm激光下,线性和指数梯度掺杂结构的LPCs的光电转换效率分别从52.7%提高到57.2%和57.7% 。

更新日期:2021-03-19
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