Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

自 2004 年细野秀夫发明非晶铟-镓-锌-氧化物 (IGZO) 基薄膜晶体管 (TFT) 以来，由于 IGZO TFT 具有高电性能、大面积等优点，因此对 IGZO TFT 的研究迅速扩大。均匀性好，加工温度低。本文回顾了基于 IGZO 的 TFT 领域的最新进展和主要趋势。在简要介绍了 IGZO 的历史和 IGZO 基 TFT 的主要优势之后，给出了 IGZO 材料和 IGZO 基 TFT 的概况。这一部分介绍了IGZO材料的电子行进轨道和沉积方法，并介绍了具体的器件结构和电学性能。随后，总结了基于 IGZO 的 TFT 应用的最新进展，包括平板显示驱动器、新型传感器、和新兴的神经形态系统。特别是讨论了柔性电子系统的实现。这篇评论的最后一部分包括结论，并给出了对该领域的展望以及对未来的预测。