In this brief, a compact ultra-wideband monolithic microwave integrated circuit single pole double throw (SPDT) switch with high isolation level and low insertion loss is presented. A π-type topology, consisted of a transmission line with an electrical length of less than 90° and two parallel grounded metal-insulator-metal capacitors, is employed to replace the conventional λ/4 transmission line between the adjacent parallel field effect transistors of the serial parallel SPDT switch. In comparison with the traditional method, an ultra-wideband high isolation behavior and the reduced dimension is achieved simultaneously with the proposed SPDT switch. Furthermore, the equivalent circuit model is built to interpret the mechanism of the improved technique. A chip sample is fabricated with Gallium Arsenide processing with a size of 1.25 × 1.05 mm 2 . The measured insertion loss is less than 1.9 dB and the isolation is better than 36 dB from DC to 30 GHz. Good agreements are observed between the simulated and measured results.

中文翻译：

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基于两臂游标效应的灵敏度增强型应变传感器


在此简介中，提出了一种具有高隔离度和低插入损耗的紧凑型超宽带单片微波集成电路单刀双掷 (SPDT) 开关。采用由电气长度小于 90° 的传输线和两个并联接地金属-绝缘体-金属电容器组成的 π 型拓扑来取代相邻并联场效应晶体管之间的传统 λ/4 传输线。串行并行 SPDT 开关。与传统方法相比，所提出的 SPDT 开关同时实现了超宽带高隔离性能和减小的尺寸。此外，还建立了等效电路模型来解释改进技术的机理。采用砷化镓工艺制作芯片样品，尺寸为1.25×1.05 mm 2 。测量的插入损耗小于 1.9 dB，从 DC 到 30 GHz 的隔离度优于 36 dB。模拟结果和测量结果之间观察到良好的一致性。