Spin-orbit torque (SOT) has been widely used in data writing of spintronic memory devices by current-induced magnetization switching. The typical structure of SOT-induced magnetization switching of ferromagnetic multilayers with perpendicular magnetic anisotropy such as Ta/CoFeB/MgO allowed the ferromagnetic and adjacent nonmagnetic layer to be patterned independently. In this letter, we study the role of device geometry in the manipulation of magnetization switching by placing two separated CoFeB magnetic bits at different locations on a Ta layer with trapezoid shape. Manipulation of the magnetization states of the magnetic bits was achieved simply by applying different write current. Both memory writing and Boolean logic functions and/nand with large logic output ratio have been demonstrated experimentally.

中文翻译：

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基于几何控制的磁化开关的AND / NAND布尔逻辑门组合的非易失性磁存储器

自旋轨道转矩（SOT）已通过电流感应磁化开关广泛用于自旋电子存储设备的数据写入中。具有垂直磁各向异性（例如Ta / CoFeB / MgO）的铁磁多层膜的SOT诱导磁化转换的典型结构允许铁磁层和相邻的非磁性层独立地进行构图。在这封信中，我们通过将两个分离的CoFeB磁性钻头放置在梯形Ta层的不同位置上，研究了器件几何形状在磁化开关操纵中的作用。磁性位的磁化状态的控制仅通过施加不同的写入电流即可实现。存储器写入和布尔逻辑功能和/ nand 具有大逻辑输出比的实验已经证明。