In this study, in-situ MOCVD-grown SiN/AlN/Al _0.05 Ga _0.95 N HEMTs were fabricated using ALD-Al ₂ O ₃ /PECVD-SiO ₂ passivation. A high on/off current ratio of 10 ⁹ and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al _0.05 Ga _0.95 N structure are investigated using frequency-dependent capacitance-voltage and conductance measurements. The shift in threshold voltage, under a gate-bias stress of 4 V for 1000 s, is less than 0.06 V for the devices with 3 nm in-situ SiN as gate dielectric. This indicates excellent bias-induced threshold-voltage stability. A saturated drain current of 6.4 A, a specific on-resistance of 5.37 $\text{m}\Omega \cdot $ cm ² , and a high breakdown voltage of 1014 V are observed for the devices with a gate width of 20 mm. Baliga’s figure of merit for the devices reaches $1.91\times 10^{8}\,\,\text{V}^{2}\Omega ^{-1}$ cm ⁻² , which confirms its potential for high-power-switching applications.

中文翻译：

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使用Al ₂ O ₃ / SiO ₂钝化在Si衬底上原位SiN / AlN / Al _0.05 Ga _0.95 N高电子迁移率晶体管

在这项研究中， 原位 使用ALD-Al ₂ O ₃ / PECVD-SiO ₂钝化工艺制备了MOCVD生长的SiN / AlN / Al _0.05 Ga _0.95 N HEMT 。实现了10 ⁹的高开/关电流比 和64 mV / dec的低亚阈值摆幅。使用取决于频率的电容-电压和电导率测量来研究SiN / AlN / Al _0.05 Ga _0.95 N结构中的界面陷阱 。对于3 nm的器件，在4 V的栅极偏置应力下持续1000 s的阈值电压偏移小于0.06 V原位SiN作为栅极电介质。这表明偏置引起的阈值电压稳定性极好。饱和漏极电流为6.4 A，比导通电阻为5.37 $ \ text {m} \ Omega \ cdot $ 对于栅极宽度为20 mm的器件，可观察到 cm ² cm ²和1014 V的高击穿电压。Baliga的设备品质因数达到 $ 1.91 \ times 10 ^ {8} \，\，\ text {V} ^ {2} \ Omega ^ {-1} $ cm ^-2 ，证实了其在大功率开关应用中的潜力。