Stability of ferroelectricity in hafnium–zirconium oxide (HZO) films deposited by sputtering and chemical solution deposition (CSD) has been investigated. After confirming the ferroelectricity of both sputtered HZO and CSD yttrium-doped HZO (Y-HZO) films, indium-tin-oxide (ITO) was deposited by sputtering on sputtered HZO or CSD Y-HZO layer to fabricate metal-ferroelectric-semiconductor (MFS) structure. It was found that the sputtered HZO films in the MFS structure became paraelectric after re-annealing in N₂ which was confirmed by both X-ray diffraction pattern and electrical measurements. On the other hand, the CSD Y-HZO films showed ferroelectric nature even after re-annealing with a negligible monoclinic phase.

已经研究了通过溅射和化学溶液沉积 (CSD) 沉积的铪-氧化锆 (HZO) 薄膜中铁电性的稳定性。在确认溅射 HZO 和 CSD 掺钇 HZO (Y-HZO) 薄膜的铁电性后，通过在溅射 HZO 或 CSD Y-HZO 层上溅射沉积氧化铟锡 (ITO) 以制造金属铁电半导体（ MFS) 结构。发现 MFS 结构中的溅射 HZO 膜在 N _{2 中}重新退火后变为顺电，这通过 X 射线衍射图和电学测量得到证实。另一方面，CSD Y-HZO 薄膜即使在以可忽略的单斜相重新退火后也显示出铁电性质。