Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low electrical conductivity and limited voltage capability of the nanowires. Here, we show that wide-band-gap AlGaN/GaN nanowires containing multiple two-dimensional electron gas channels can be used to create high-electron-mobility tri-gate transistors for power-conversion applications. The multiple channels lead to improved conductivity in the nanowires, and a three-dimensional field-plate design is used to manage the high electric field. Power devices made with 15-nm-wide nanowires are shown to exhibit low specific on resistances of 0.46 mΩ cm⁻², enhancement-mode operation, improved dynamic behaviour and breakdown voltages as high as 1,300 V.

基于纳米线的设备可能用于各种电子应用，从超大规模数字电路到 5G 通信网络。然而，由于纳米线相对较低的电导率和有限的电压能力，这些器件通常仅限于低功率应用。在这里，我们展示了包含多个二维电子气通道的宽带隙 AlGaN/GaN 纳米线可用于创建用于功率转换应用的高电子迁移率三栅极晶体管。多通道可提高纳米线的导电性，并且使用三维场板设计来管理高电场。用 15 nm 宽的纳米线制成的功率器件显示出 0.46 mΩ cm ^{-2的低比导通电阻}、增强模式操作、改进的动态行为和高达 1,300 V 的击穿电压。