In this study, ellipsometry measurement have been used to investigate optical properties of GaMnAsP/GaAs structure. Within the framework of the three-layer model we have estimated, for the first time, the linear and nonlinear optical parameters of GaMnAsP/GaAs structure. In fact, the structure under study is considered as strongly absorbing material in the visible range with low loss factor dissipation and reveals high optical conductivity behavior. The capacitive optical response shows that the inspected material can be very useful in energy storage applications. The theoretically predicted parameters of the nonlinear refractive index $n_2$ and nonlinear susceptibility ${\chi }^{\left(3\right)}$ of the material indicate that GaMnAsPlayer grown on GaAs can be adapted for nonlinear optoelectronic applications area. Our study shows that the GaMnAsP layer will be useful for optoelectronic applications.

在这项研究中，椭偏测量已用于研究GaMnAsP / GaAs结构的光学性质。在三层模型的框架内，我们首次估计了GaMnAsP / GaAs结构的线性和非线性光学参数。实际上，所研究的结构被认为是可见光范围内的强吸收材料，损耗因子耗散低，并且具有较高的光导性能。电容性光学响应表明，所检查的材料在能量存储应用中可能非常有用。非线性折射率的理论预测参数${ñ}_{\mathrm{2个}}$ 和非线性磁化率 ${\chi }^{（3）}$材料的材料表明在GaAs上生长的GaMnAsP层可适用于非线性光电应用领域。我们的研究表明，GaMnAsP层将对光电应用有用。