The influence of directional elastic compression deformation on the electrophysical properties of $p$-type germanium single crystals was investigated. The dependences of the Hall coefficient on the magnetic field strength on samples of different crystallographic orientations in the absence and in the presence of uniaxial mechanical stress were measured at two temperatures (room temperature and liquid nitrogen temperature). On the same samples, the tensoresistance and longitudinal tensomagnetoresistance were studied in a wide range of mechanical stresses ($0\le X\le 1\mathrm{GPa}$). The presence of anisotropy of galvanomagnetic effects in $p$-Ge was revealed both in the absence of deformation and under very strong mechanical loads. Experiments on measuring the longitudinal tensomagnetoresistance make it possible to conclude that the isoenergetic surfaces in $p$-Ge, which arise as a result of directional elastic compression deformation, cannot be considered as perfect ellipsoids of revolution, at least in the investigated $X$ range.

定向弹性压缩变形对铝的电物理性质的影响。 $p$研究了锗型单晶。在两个温度（室温和液氮温度）下，在不存在和存在单轴机械应力的情况下，测量霍尔系数对不同晶体取向样品上磁场强度的依赖性。在相同的样品上，研究了在广泛的机械应力下的拉伸电阻和纵向拉伸磁电阻（$0\le X\le \mathrm{1个}\mathrm{GPa}$）。磁电效应各向异性的存在。$p$在没有变形的情况下和在非常强的机械载荷下都显示出-Ge。通过测量纵向张力磁阻的实验，可以得出结论：$p$由于方向弹性压缩变形而产生的-Ge至少在研究中不能被认为是理想的旋转椭圆体 $X$ 范围。