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Pulsed DC Sputtering of Highly c-Axis AlN Film on Top of Si (111) Substrate
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-03-27 , DOI: 10.1002/pssb.202000549 Abid Iqbal 1, 2 , Glenn Walker 1 , Leonie Hold 1 , Alanna Fernandes 3 , Alan Iacopi 1 , Faisal Mohd-Yasin 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-03-27 , DOI: 10.1002/pssb.202000549 Abid Iqbal 1, 2 , Glenn Walker 1 , Leonie Hold 1 , Alanna Fernandes 3 , Alan Iacopi 1 , Faisal Mohd-Yasin 1
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Herein, pulsed DC sputtering of the AlN film on top of the Si (111) substrate is reported on. First, major articles on the reactive sputtering of AlN film on top of Si (111) substrate that were published in the past 30 years are tabulated. Then, a sputtering recipe to produce a consistent and high-crystal-quality (as measured by the full width at half maximum [FWHM] of rocking curve) AlN film across varying substrate temperatures (250–450 °C) and sputtering powers (1200–2400 W) is proposed. In addition, the influence of both parameters to in-plane stress is demonstrated, in agreement with similar trends that have been reported in the literature for AlN films on other substrates. The best sample is produced at a substrate temperature of 350 °C and sputtering power of 1800 W, resulting in FWHM of rocking curve of 1.84°, surface roughness of 1 nm, and in-plane stress of +300 MPa. The recipe herein is beneficial for integration of AlN thin film in complementary metal–oxide–semiconductor and micro-electromechanical system processes.
中文翻译：
Si (111) 衬底顶部高 c 轴 AlN 薄膜的脉冲直流溅射
本文报道了在 Si (111) 衬底顶部的 AlN 膜的脉冲直流溅射。首先，列出了过去 30 年发表的关于在 Si (111) 衬底上反应溅射 AlN 薄膜的主要文章。然后，在不同衬底温度 (250–450 °C) 和溅射功率 (1200 –2400 W) 建议。此外，证明了这两个参数对面内应力的影响，与文献中报道的其他基板上的 AlN 薄膜的类似趋势一致。最好的样品是在基板温度 350°C 和溅射功率 1800 W 下生产的，导致摇摆曲线的 FWHM 为 1.84°，表面粗糙度为 1 nm，和+300 MPa的面内应力。本文的配方有利于将 AlN 薄膜集成到互补金属-氧化物-半导体和微机电系统工艺中。
更新日期：2021-06-05
中文翻译：
Si (111) 衬底顶部高 c 轴 AlN 薄膜的脉冲直流溅射
本文报道了在 Si (111) 衬底顶部的 AlN 膜的脉冲直流溅射。首先，列出了过去 30 年发表的关于在 Si (111) 衬底上反应溅射 AlN 薄膜的主要文章。然后，在不同衬底温度 (250–450 °C) 和溅射功率 (1200 –2400 W) 建议。此外，证明了这两个参数对面内应力的影响，与文献中报道的其他基板上的 AlN 薄膜的类似趋势一致。最好的样品是在基板温度 350°C 和溅射功率 1800 W 下生产的，导致摇摆曲线的 FWHM 为 1.84°，表面粗糙度为 1 nm，和+300 MPa的面内应力。本文的配方有利于将 AlN 薄膜集成到互补金属-氧化物-半导体和微机电系统工艺中。
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