In this work, Ag-doped HfO₂-based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO₂ as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament.

中文翻译：

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实现通过掺杂的Ag自由成形特性为基于的HfO 2-RRAM

在这项工作中，掺杂Ag的的HfO ₂为基础的高的通断比，低功率消耗和形成无属性电阻式随机存取存储器（RRAM）进行了研究。我们提出的RRAM与通孔结构的制造流程。掺杂的Ag成后的HfO ₂作为切换层，该装置可在不高电压形成处理执行电阻开关。传导机制随后通过电流拟合分析验证。电场仿真还用于观察电场分布，并提出了最后一个物理模型，以提供灯丝的形成和溶解的解释。