High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon carbide MOSFET in medium-voltage (MV) application. Design considerations, including insulation scheme, high-voltage-insulated transformer design, and load voltage regulation scheme, are proposed. In addition, the performance of the secondary-side-regulated (SSR) GDPS and that of the primary-side-regulated (PSR) GDPS are compared for several aspects, including interwinding capacitance, load voltage regulation rate, conversion efficiency, and hardware complexity. Finally, an SSR GDPS and a PSR GDPS, with an insulation voltage of 20 kV, are built in the lab. The test results demonstrate that the PSR GDPS is more preferable because of lower interwinding capacitance, lower load voltage regulation rate, higher conversion efficiency, and simpler control circuit.

中文翻译：

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中压转换器中应用的 10kV SiC MOSFET 高压绝缘栅极驱动电源的设计考虑


高性能栅极驱动电源（GDPS）对于确保功率半导体器件栅极驱动器的可靠性和安全性起着至关重要的作用。本文重点介绍中压 (MV) 应用中 10 kV 碳化硅 MOSFET 的高压绝缘 GDPS 设计。提出了设计考虑因素，包括绝缘方案、高压绝缘变压器设计和负载电压调节方案。此外，还对次级侧调节（SSR）GDPS和初级侧调节（PSR）GDPS的性能进行了多个方面的比较，包括绕组间电容、负载电压调节率、转换效率和硬件复杂性。最后在实验室搭建了绝缘电压为20 kV的SSR GDPS和PSR GDPS。测试结果表明，PSR GDPS具有更低的绕组间电容、更低的负载电压调整率、更高的转换效率和更简单的控制电路，是更优选的。