In this letter, we propose a heat-path design for releasing heat confined in FinFETs. Conductive material stacks consisting of metals and vias on silicon can be good heat paths that lower junction temperature. However, they also increase parasitic capacitance, leading to degraded circuit performance. Therefore, we analyzed the impact of various heat paths with different metal stacks and locations on junction temperature, power consumption, and oscillation frequency of ring oscillators. Measurements of the oscillators showed that the optimized heat-path design had a 24.9%-lower change in junction temperature and a 1.53% higher oscillation frequency compared to a conventional layout. Furthermore, from thermally aware-compact model simulation results, we show that the proposed heat-path methodology can be more effective with the FinFET process than with the planar CMOS process.

中文翻译：

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使用热路径设计方法减少FinFET中的局部热效应

在这封信中，我们提出了一种热通道设计，用于释放FinFET中受限的热量。由金属和硅上的通孔组成的导电材料叠层可以成为降低结温的良好热通道。但是，它们也会增加寄生电容，从而导致电路性能下降。因此，我们分析了具有不同金属叠层和位置的各种热路径对结点温度，功耗和环形振荡器振荡频率的影响。振荡器的测量结果表明，与传统布局相比，优化的热路径设计的结温变化降低了24.9％，振荡频率提高了1.53％。此外，根据热感知紧凑模型仿真结果，