This letter proposes a new emitter-base-collector-base-emitter (EBCBE) SiGe HBT suited for high power RF switches. Two collector-base-emitter (CBE) SiGe HBTs are merged into a single EBCBE SiGe HBT, not only to double its maximum voltage swing, but also to decrease its active area and parasitics. To further boost its power handling, a capacitive voltage distribution and a collector floating are incorporated into the new EBCBE SiGe HBT. A X-band $\lambda $ /4 shunt single-pole-double-throw (SPDT) switch using the EBCBE SiGe HBT achieves measured insertion losses and isolations of 1.2/1.3 and 29.2/23.0 dB at 10 GHz in TX/RX modes, respectively. In TX mode, measured input 1-dB power compression ( $\text{P}_{\text {1dB}}$ ) is 25.4 dBm, and it can be extended to 28.5 dBm at −0.6 V base bias of the EBCBE SiGe HBT.

中文翻译：

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用于高功率，单刀双掷X波段开关的新型发射极-基极-收集器-基极发射器SiGe HBT

这封信提出了一种适用于高功率射频开关的新型发射极-基极-集电极-基极-发射极（EBCBE）SiGe HBT。两个集电极-基极-发射极（CBE）SiGe HBT合并为一个EBCBE SiGe HBT，不仅使其最大电压摆幅加倍，而且减小了其有效面积和寄生效应。为了进一步提高其功率处理能力，新的EBCBE SiGe HBT中集成了电容性电压分布和集电极浮动。X波段 $ \ lambda $ 使用EBCBE SiGe HBT的/ 4分流单刀双掷（SPDT）开关在TX / RX模式下在10 GHz时可实现测得的插入损耗和1.2 / 1.3和29.2 / 23.0 dB的隔离度。在TX模式下，测得的输入1 dB功率压缩（ $ \ text {P} _ {\ text {1dB}} $ ）为25.4 dBm，并且可以在EBCBE SiGe HBT的-0.6 V基本偏置下扩展到28.5 dBm。