Random trapping and detrapping of charged carriers in the vicinity of gate oxide/Si interface has for long been considered as the dominant noise source in Si nanowire (SiNW) FET-based biochemical sensors. Here we extend our previous work presenting a Schottky junction tri-gate SiNWFETs (SJGFET) fabricated on a bonded silicon-on-insulator (SOI) substrate, aiming for ultra-low device noise generation. The SJGFET exhibits near-ideal gate coupling efficiency with a subthreshold swing of ~66 mV/dec. Its gate-referred voltage noise, $S_{\text {vg}}$ , are ${1.2}\times {10}^{-{10}}$ and ${1.1}\times {10}^{-{11}}\,\,\text {V}^{{2}}\,\,\mu \text{m}^{{2}}$ /Hz at 1 and 10 Hz, respectively. These $S_{\text {vg}}$ values are significantly lower than that of previously reported FET-based sensors. More importantly, $S_{\text {vg}}$ of the SJGFET are below the reported voltage noise generated by the oxide/electrolyte sensing interface. Using our SJGFET as the signal transducer can greatly relieve the concern of the adverse effect from the intrinsic device noise in biochemical sensing applications.

中文翻译：

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绝缘体上键合硅衬底上的超低噪声肖特基结三栅极硅纳米线FET

长期以来，栅极氧化物/ Si界面附近的带电载流子的随机捕获和去捕获一直被认为是基于Si纳米线（SiNW）FET的生化传感器中的主要噪声源。在这里，我们扩展了以前的工作，提出了在绝缘体上键合硅（SOI）衬底上制造的肖特基结三栅SiNWFET（SJGFET），旨在产生超低的器件噪声。SJGFET具有接近理想的栅极耦合效率，亚阈值摆幅约为〜66 mV / dec。它的栅极参考电压噪声 $ S _ {\ text {vg}} $ ， 是 $ {1.2} \次{10} ^ {-{10}} $ 和 $ {1.1} \ times {10} ^ {-{11}} \，\，\ text {V} ^ {{2}} \，\，\ mu \ text {m} ^ {{2}} $ / Hz分别为1和10 Hz。这些 $ S _ {\ text {vg}} $ 该值明显低于先前报道的基于FET的传感器的值。更重要的是， $ S _ {\ text {vg}} $ SJGFET的电压低于所报告的由氧化物/电解质传感界面产生的电压噪声。使用我们的SJGFET作为信号传感器可以大大减轻对生化传感应用中固有器件噪声产生不利影响的担忧。