A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n - -GaN drift layer with a precisely-controlled n-type doping. A high current on/off ratio of 10 10 , an ideality factor of 1.03, a low specific on-resistance of 1.41 mΩ·cm 2 , and a relatively high breakdown voltage (BV) of 250 V have been achieved for the SBD without edge termination. Furthermore, with an Argon-implanted termination, the as-fabricated GaN-on-Si SBD shows a record high BV of 405 V, yielding a critical electric field of ~ 2 MV/cm, while the forward conduction characteristics are well maintained.

中文翻译：

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具有注入氩气终端的高电压、高 ION/IOFF 准垂直 GaN-on-Si 肖特基势垒二极管


采用精确控制n型掺杂的高质量n--GaN漂移层成功制备了高性能准垂直GaN肖特基势垒二极管(SBD)。无边缘SBD实现了10 10 的高电流开/关比、1.03的理想因子、1.41 mΩ·cm 2 的低比导通电阻和250 V的相对高击穿电压（BV）终止。此外，采用氩注入终端，所制造的 GaN-on-Si SBD 显示出 405 V 的创纪录高 BV，产生约 2 MV/cm 的临界电场，同时良好地保持了正向传导特性。