We report on achieving high-performance $\beta $ -Ga ₂ O ₃ power devices through the incorporation of the p-type NiO _x . $\beta $ -Ga ₂ O ₃ p-n heterojunction (HJ) diodes, as well as the novel p-n HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga’s power figure of merit (P-FOM). The HJ p-n diode is introduced to provide a large built-in potential and alleviate the peak electric field to enhance the BV. The non-field plated p-n HJ diode and HJ-FET acquire a breakdown voltage (BV)/specific on-resistance ( $\text{R}_{\text {on,sp}}$ ) of 1220 V/1.08 $\text{m}\Omega \, \cdot $ cm ² and 1115 V/3.19 $\text{m}\Omega \,\cdot $ cm ² , respectively. Therefore, the P-FOM which is defined as the BV ² / $\text{R}_{\text {on,sp}}$ is yielded to be 1.38 GW/cm ² and 0.39 GW/cm ² for p-n HJ diode and HJ-FET, respectively. Due to the hard realization of p-type Ga ₂ O ₃ , these findings show significant insights on the development of Ga ₂ O ₃ power devices and offer great promises of implementing p-NiO _x in boosting the Ga ₂ O ₃ power device performances.

中文翻译：

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演示了BV ² / R导通的p-NiO _x / n-Ga ₂ O ₃异质结栅极FET和二极管_{，sp的优值}图分别为0.39 GW / cm ²和1.38 GW / cm ²

我们报告实现高性能 $ \ beta $ 通过掺入p型NiO _x形成 -Ga ₂ O ₃功率器件 。 $ \ beta $ -Ga ₂ O ₃ pn异质结（HJ）二极管，以及新颖的pn HJ栅极（G）场效应晶体管（HJ-FET），都展示了最新的Baliga功率因数（ P-FOM）。引入HJ pn二极管可提供较大的内置电势，并减轻峰值电场以增强BV。非场镀pn HJ二极管和HJ-FET获得击穿电压（BV）/特定的导通电阻（ $ \ text {R} _ {\ text {on，sp}} $ ）的1220 V / 1.08 $ \ text {m} \ Omega \，\ cdot $ cm ²和1115 V / 3.19 $ \ text {m} \ Omega \，\ cdot $ cm ² 。因此，定义为BV ² / 的P-FOM $ \ text {R} _ {\ text {on，sp}} $ 对于pn HJ二极管和HJ-FET，其产生的功率分别为1.38 GW / cm ²和0.39 GW / cm ²。由于难以实现p型Ga ₂ O ₃ ，这些发现显示了对Ga ₂ O ₃功率器件开发的重要见解， 并为实现p-NiO _x来提高Ga ₂ O ₃功率器件的性能提供了广阔的前景 。