We report a processing technique to form a surface reinforcement layer (SRL) in GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with the aim to suppress device dynamic on-resistance (R _ON ) degradation caused by long-term hot-electron stress. The SRL is a crystalline (Al)GaON layer formed by reconstruction of the heterojunction surface through plasma oxidation and high temperature annealing. MIS-HEMTs with SRL exhibit substantially suppressed dynamic R _ON degradation than the conventional devices without SRL, after long-term hot-electron stress. The (Al)GaON SRL exhibits substantially enhanced thermal stability and strong immunity to energetic carriers. The SRL-enabled suppression of hot-electron-induced degradation is further verified by the electroluminescence characterizations.

中文翻译：

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具有表面增强作用的GaN MIS-HEMT可抑制热电子诱导的降解

我们报告了一种在GaN金属绝缘体半导体高电子迁移率晶体管（MIS-HEMTs）中形成表面增强层（SRL）的处理技术，目的是抑制 由于长期使用而引起的器件动态导通电阻（R _ON）退化。术语热电子应力。SRL是晶体（Al）GaON层，是通过等离子氧化和高温退火重建异质结表面而形成的。具有SRL的MIS-HEMT表现出显着抑制的动态R _ON在长期的热电子应力作用下，与没有SRL的传统器件相比，这种器件的性能下降。（Al）GaON SRL表现出显着增强的热稳定性和对高能载流子的强免疫力。电致发光特性进一步验证了SRL抑制热电子诱导降解的能力。